leshan radio company, ltd. lmbt5401dw1t1g maximum ratings rating symbol v alue unit collector?emitter voltage v ceo -150 vdc collector?base voltage v cbo -160 vdc emitter?base voltage v ebo -5.0 vdc collector current ? continuous i c -500 madc thermal characteristics characteristic symbol ma x unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j ,t stg ?55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(3) (br)ceo vdc (i c =-1.0 madc, i b = 0) -150 ? collector?base breakdown voltage (br)cbo vdc (i c =-100 adc, i e = 0) -160 ? emitter?base breakdown voltage (br)ebo vdc (i e =-10 adc, i c = 0) -5.0 ? collector cutoff current i cbo ( v cb =-120vdc, i e = 0) ? -50 nadc ( v cb =-120vdc, i e = 0, t a =100 c) ? -50 adc 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width = 300 s, duty cycle = 2.0%. feature ? device marking and ordering information device marking shipping 2l 3000/tape&reel dual pnp small signal surface 1 3 2 sot-363/sc-88 6 4 5 e 2 b 2 e 1 c 2 b 1 c 1 lmbt5401dw1t1g lmbt5401dw1t3g 2l 10000/tape&reel mount transistor v v v compliance with rohs requirements. we declare that the material of product rev.o 1/5 s-lmbt5401dw1t1g s-lmbt5401dw1t3g s-lmbt5401dw1t1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable.
leshan radio company, ltd. lmbt5401dw1t1g , s-lmbt5401dw1t1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (2) dc current gain h fe ?? (i c = ?1.0madc, v ce = ?5.0 vdc) 50 ?? (i c = ?10 madc, v ce = ?5.0 vdc) 60 240 (i c = ?50 madc, v ce = ?5.0 vdc) 50 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ?? ? 0.2 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 0.5 base?emitter saturation voltage v be(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ?? ? 1.0 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 1.0 small?signal characteristics current?gain ? bandwidth product f t mhz (i c = ?10 madc, v ce = ?10 vdc, f = 100 mhz) 100 300 output capacitance c obo pf (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) ?? 6.0 small?signal current gain h fe ? (i c = ?1.0madc, v ce = ?10vdc, f = 1.0 khz) 40 200 noise figure n f db (i c = ?200 adc, v ce = ?5.0 vdc,r s =10 ? , f = 1.0 khz) ?? 8.0 rev.o 2/5
leshan radio company, ltd. v ce = ?1.0 v v ce = ?5.0 v i c , collector current (ma) figure 1. dc current gain t j =125c 25c ?55c 200 150 100 70 50 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 h fe , current gain 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 i c =1.0ma i b , base current (ma) figure 2. collector saturation region v be , base?emitter voltage (volts) figure 3. collector cut?off region v ce , collector? emitter voltage (volts) i c , collector current ( a) 10ma 30 ma 100 ma v ce = 30 v i c = i ces t j = 125c 75c 25c reverse forward 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 rev.o 3/5 lmbt5401dw1t1g , s-lmbt5401dw1t1g
leshan radio company, ltd. i c , collector current (ma) figure 4. ?on? voltages v, voltage (volts) c, capacitance (pf) v , temperature coefficient (mv/ c) t, time (ns) i c , collector current (ma) figure 5. temperature coefficients figure 6. switching time test circuit v r , reverse voltage (volts) figure 7. capacitances i c , collector current (ma) figure 8. turn?on time i c , collector current (ma) figure 9. turn?off time t, time (ns) t j =25c v ce(sat) @ i c /i b =10 t j =25c c ibo v be(sat) @ i c /i b =10 v bb 10 s input pulse v in +8.8 v r b 5.1 k 0.25 f v in 100 1n914 v out r c v cc ?30 v 3.0 k t r , t f < 10 ns duty cycle = 1.0% values shown are for i c @ 10 ma t j = ?55c to 135c vc for v ce(sat) vb for v be(sat) c obo i c /i b = 10 t j = 25c t d @ v be(off) = 1.0v v cc = 120v t r @v cc = 30v t r @v cc = 120v t f @v cc = 120v t f @ v cc = 30v t s @v cc = 120v i c /i b =10 t j = 25c 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 1000 700 500 300 200 100 70 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 10.2v 100 rev.o 4/5 lmbt5401dw1t1g , s-lmbt5401dw1t1g
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ?e? b 6 pl xx m xx = specific device code m = date code generic marking diagram* 1 6 sc?88 dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e xx 1 6 m or h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 rev.o 5/5 lmbt5401dw1t1g , s-lmbt5401dw1t1g
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